Title :
Direct imaging of a high-power diode laser cavity using a transparent indium-tin-oxide (ITO) contact
Author :
Wang, Xinqiao ; Lu, BO ; Hersee, S.D.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We describe a novel "see-through" indium-tin-oxide contact on the n-side of a high power unstable resonator semiconductor laser (URSL) that allows direct observation of the cavity during high power operation. Under optimized annealing conditions this transparent ITO contact has a low enough specific contact resistivity to permit normal high power CW operation of the URSL and allows the observation of filamentation. This contact scheme is applicable to a wide range of semiconductor lasers and is especially appropriate for high power devices. The same structure can also be used to obtain a 2-D thermal map of the laser cavity.
Keywords :
annealing; electrical conductivity; electrical contacts; indium compounds; laser cavity resonators; laser variables measurement; optical images; semiconductor lasers; transparency; 2-D thermal map; ITO; InSnO; direct imaging; filamentation; high power CW operation; high power operation; high power unstable resonator semiconductor laser; high-power diode laser cavity; laser cavity; n-side; optimized annealing conditions; specific contact resistivity; transparent indium-tin-oxide contact; Contacts; Diode lasers; Gallium arsenide; Indium tin oxide; Optical resonators; Power lasers; Semiconductor lasers; Surface emitting lasers; Testing; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
