Title :
Wavelength conversion using a T-gate laser
Author :
Lu, Chih-Cheng ; Jiang, Shijun ; Yeh, P. Sophia ; Heim, Peter J S ; Wood, Colin E.C. ; Dagenais, Mario
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Wavelength conversion from 830 nm to 837 nm of a 250 Mb/s NRZ optical signal has been demonstrated at 10/sup -9/ bit-error rate and a detector sensitivity of -29 dBm using a semiconductor power amplifier monolithically integrated at 90/spl deg/ with a GaAs-AlGaAs SQW semiconductor laser. This device offers a high degree of isolation between the input and the output and has the potential for high-speed operation with a wide continuous-wavelength conversion range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; integrated optoelectronics; optical communication equipment; optical frequency conversion; quantum well lasers; sensitivity; wavelength division multiplexing; 250 Mbit/s; 830 to 837 nm; GaAs-AlGaAs; GaAs-AlGaAs SQW semiconductor laser; NRZ optical signal; T-gate laser; WDM; bit-error rate; detector sensitivity; high-speed operation; monolithically integrated; semiconductor power amplifier; wavelength conversion; wavelength division multiplexing; wide continuous-wavelength conversion range; Bit error rate; High speed optical techniques; Integrated optics; Optical sensors; Optical signal processing; Optical wavelength conversion; Power amplifiers; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission;
Journal_Title :
Photonics Technology Letters, IEEE
