10-GHz 8.7-ps Pulse Generation From a Single-Mode Gain-Switched AlGaAs VCSEL at 850 nm

Author

Nakazawa, Masataka ; Hasegawa, Hideaki ; Oikawa, Yosuke

Author_Institution

Tohoku Univ., Miyagi-ken

Volume

19

Issue

16

fYear

2007

Firstpage

1251

Lastpage

1253

Abstract

We have successfully generated a 10-GHz 8.7-ps pulse train at 850 nm by using a gain switching technique with a high-speed AlGaAs-based vertical-cavity surface-emitting laser (VCSEL). The VCSEL, which operates in a single transverse mode by employing an aluminum oxide aperture, has a modulation bandwidth of 6.3 GHz and a relaxation oscillation frequency at around 11.7 GHz. An error-free 10-Gb/s return-to-zero data modulation was demonstrated by using the generated 10-GHz pulse train.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; optical pulse generation; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; bandwidth 6.3 GHz; bit rate 10 Gbit/s; frequency 10 GHz; gain switching technique; pulse generation; return-to-zero data transmission; single transverse mode; single-mode gain-switched VCSEL; vertical-cavity surface-emitting laser; wavelength 850 nm; Aluminum oxide; Apertures; Bandwidth; Frequency; Laser modes; Optical pulse generation; Pulse generation; Pulse modulation; Surface emitting lasers; Vertical cavity surface emitting lasers; AlGaAs vertical-cavity surface-emitting laser (VCSEL); gain switching; return-to-zero (RZ) data transmission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2007.901742

Filename

4280879