InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD

Author

Lammert, R.M. ; Forbes, D.V. ; Smith, G.M. ; Osowski, M.L. ; Coleman, J.J.

Author_Institution

Microelectron. Lab., Illinois Univ., Urbana, IL, USA

Volume

8

Issue

1

fYear

1996

Firstpage

78

Lastpage

80

Abstract

The design and operation of strained-layer InGaAs-GaAs lasers with monolithically integrated intracavity electroabsorption modulators fabricated by selective-area epitaxy are presented. Devices with modulator lengths of 290, 620, and 1020 μm have cw threshold currents of 9, 7.5, and 7.5 mA, respectively, at a modulator bias of 0 V. These devices also exhibit extinction ratios of 16.5, 19.5, and 20.5 dB, respectively, at a modulator bias of 2 V.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical fabrication; quantum well lasers; vapour phase epitaxial growth; CW threshold currents; InGaAs-GaAs; MOCVD; extinction ratios; monolithically integrated intracavity electroabsorption modulators; selective-area epitaxy; strained-layer quantum-well lasers; Diode lasers; Epitaxial growth; Extinction ratio; Gallium arsenide; MOCVD; Optical coupling; Optical design; Optical losses; Optical materials; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.475784

Filename

475784