DocumentCode :
1079144
Title :
High-Work-Function Ir/HfLaO 
-MOSFETs Using Low-Temperature-Processed Shallow Junction
Author :
Cheng, C.F. ; Wu, C.H. ; Su, N.C. ; Wang, S.J. ; McAlister, Sean P. ; Chin, Albert
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Volume :
55
Issue :
3
fYear :
2008
fDate :
3/1/2008 12:00:00 AM
Firstpage :
838
Lastpage :
843
Abstract :
We report a high effective work function (Phim-eff) and a very low Vt Ir gate on HfLaO p-MOSFETs using novel self-aligned low-temperature shallow junctions. This gate-first process has shallow junctions of 9.6 or 20 nm that are formed by solid phase diffusion using SiO2-covered Ga or Ni/Ga. At 1.2-nm effective oxide thickness, good Phim-eff of 5.3 eV, low Vt of +0.05 V, high mobility of 90 cm2/V-s at -0.3 MV/cm, and small 85degC negative bias-temperature instability (NBTI) of 20 mV (10 MV/cm for 1 h) are measured for Ir/HfLaO p-MOSFETs.
Keywords :
MOSFET; carrier mobility; diffusion; hafnium compounds; iridium; semiconductor junctions; silicon compounds; thermal stability; work function; Ir-HfLaO; SiO2; effective work function; high-work-function p-MOSFET; negative bias-temperature instability; self-aligned low-temperature-processed shallow junction; size 1.2 nm; size 20 nm; size 9.6 nm; solid phase diffusion; temperature 85 C; voltage 20 mV; Atherosclerosis; Councils; Hafnium compounds; MOSFET circuits; Niobium compounds; Solids; Thickness measurement; Titanium compounds; Very large scale integration; Voltage; HfLaO; solid phase diffusion; ultrashallow junction;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.915060
Filename :
4455772
Link To Document :
