Title :
Temporal and spectral characteristics of back-illuminated InGaAs metal-semiconductor-metal photodetectors
Author :
Hargis, M.C. ; Ralph, S.E. ; Woodall, J. ; McInturff, D. ; Negri, A.J. ; Haugsjaa, P.O.
Author_Institution :
Dept. of Phys., Emory Univ., Atlanta, GA, USA
Abstract :
We report dramatic differences in the impulse response and wavelength dependence of back versus top illuminated In/sub 0.53/Ga/sub 0.47/As planar metal-semiconductor-metal devices. Via direct measurement of transit-time limited devices we identify the mechanisms involved and thereby allow the optimum design of multi-Gbit, high responsivity back-illuminated devices. We show that responsivities greater than 0.8 A/W are achievable with >8 GHz bandwidth for 50-μm-diameter devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; metal-semiconductor-metal structures; optical planar waveguides; optical waveguide components; optimisation; photodetectors; transient response; 50 mum; 8 GHz; In/sub 0.53/Ga/sub 0.47/As; In/sub 0.53/Ga/sub 0.47/As planar metal-semiconductor-metal devices; InGaAs metal-semiconductor-metal photodetectors; back illuminated; back-illuminated; high responsivity back-illuminated devices; impulse response; spectral characteristics; temporal characteristics; top illuminated; transit-time limited devices; wavelength dependence; Bandwidth; Capacitance; Indium gallium arsenide; Lighting; Optical fiber cables; Optical fiber devices; PIN photodiodes; Photodetectors; Substrates; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
