Evaluation of THM-Grown CdZnTe Material for Large-Volume Gamma-Ray Detector Applications

Author

Amman, Mark ; Lee, Julie S. ; Luke, Paul N. ; Chen, Henry ; Awadalla, Salah A. ; Redden, Robert ; Bindley, Glenn

Author_Institution

Lawrence Berkeley Nat. Lab., Berkeley, CA

Volume

56

Issue

3

fYear

2009

fDate

6/1/2009 12:00:00 AM

Firstpage

795

Lastpage

799

Abstract

Over 25 1-cm³ CdZnTe crystals produced using the Traveling Heater Method at Redlen Technologies have been characterized. The charge carrier mobility and lifetime, and charge carrier transport uniformity of each crystal were measured using alpha particles. Some of the crystals were made into coplanar-grid detectors and their performance characterized using 662 keV gamma rays. The average electron mobility-lifetime product for these crystals was found to be a factor of about five times greater than that measured from crystals obtained over the last decade from two other commercial crystal growers. The coplanar-grid detectors produced from the material typically achieved an energy resolution at 662 keV near 2% FWHM when operated at room temperature. This is comparable to the best coplanar-grid detectors commercially produced today.

Keywords

II-VI semiconductors; cadmium compounds; carrier lifetime; crystal growth; electron mobility; gamma-ray detection; semiconductor counters; semiconductor growth; zinc compounds; CdZnTe; CdZnTe crystal growth; FWHM; Redlen technology; charge carrier lifetime; charge carrier transport; coplanar-grid detectors; electron lifetime; electron mobility; electron volt energy 662 keV; large-volume gamma-ray detector application; traveling heater method; Alpha particles; Charge carrier mobility; Charge carriers; Charge measurement; Crystalline materials; Crystals; Current measurement; Gamma ray detection; Gamma ray detectors; Particle measurements; CdZnTe detectors; charge carrier lifetime; charge carrier mobility; gamma-ray spectroscopy detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2010402

Filename

5076033