Title :
Characteristics of a buried-channel graded drain with punchthrough stopper (BGP) MOS device
Author :
Sunami, Hideo ; Shimohigashi, Katsuhiro ; Hashimot, Norikazu
Author_Institution :
Hitachi, Ltd., Tokyo, Japan
fDate :
4/1/1982 12:00:00 AM
Abstract :
MOS device structures having a graded-drain (G), a buried-channel (B), and a punchthrough stopper (P) are realized by a triimplantation technique without additional masking. Combined effects of B, G, and P are experimentally investigated. Significant improvements in source-to-drain (S-D) breakdown voltage and the short-channel effect are observed in a BGP device. The BGP device structure will be durable for 5-V operation in the coming VLSI era.
Keywords :
Boron; Breakdown voltage; Circuits; Large scale integration; MOS devices; Secondary generated hot electron injection; Stress; Temperature; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20751
