DocumentCode :
1079267
Title :
Design and Properties of Phototransistor Photodetector in Standard 0.35- 
m SiGe BiCMOS Technology
Author :
Lai, Kuang-Sheng ; Huang, Ji-Chen ; Hsu, Klaus Y -J
Author_Institution :
Nat. Tsing Hua Univ., Hsinchu
Volume :
55
Issue :
3
fYear :
2008
fDate :
3/1/2008 12:00:00 AM
Firstpage :
774
Lastpage :
781
Abstract :
In this paper, without altering any step of the commercial 0.35-mum SiGe BiCMOS process, a novel photodetector named phototransistor photodetector (PTPD) has been realized and demonstrated. The PTPD shows high photoresponsivity and its structure relaxes the tradeoff between sensitivity and speed. Responsivities of 9.5 A/W for 670 nm light and of 5.2 A/W for 850 nm light were achieved. The operation details of the PTPD are introduced in this paper. The device can be readily integrated with other on-chip circuits to form a high-performance optoelectronic IC. The low cost, the high performance, and the flexibility in optical-electrical design allow the SiGe PTPD to be used in many demanding applications.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; integrated optoelectronics; photodetectors; phototransistors; sensitivity; SiGe; optoelectronic IC design; photoresponsivity; phototransistor photodetector; sensitivity; size 0.35 mum; standard BiCMOS technology; wavelength 670 nm; wavelength 850 nm; Application specific integrated circuits; BiCMOS integrated circuits; Costs; Flexible printed circuits; Germanium silicon alloys; Integrated optics; Photodetectors; Photonic integrated circuits; Phototransistors; Silicon germanium; Photodetector; SiGe; phototransistor; responsivity;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.915385
Filename :
4455784
Link To Document :
