DocumentCode
1079518
Title
Laser annealing of low dose ion-implanted silicon and analysis by photoacoustic spectroscopy
Author
McFarlane, R. ; Hess, Laura
Author_Institution
Hughes Research Laboratories, Malibu, CA, USA
Volume
15
Issue
9
fYear
1979
fDate
9/1/1979 12:00:00 AM
Firstpage
990
Lastpage
991
Keywords
Amorphous semiconductor materials/devices; Heat treatment; Laser applications, materials processing; Amorphous materials; Annealing; Backscatter; Chemical lasers; Crystallization; Gallium arsenide; Optical materials; Semiconductor lasers; Silicon; Spectroscopy;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1979.1070301
Filename
1070301
Link To Document