Title :
A closed-form threshold voltage expression for a small-geometry MOSFET
Author :
Akers, L.A. ; Chao, C.S.
Author_Institution :
Arizona State University, Tempe, AZ
fDate :
4/1/1982 12:00:00 AM
Abstract :
An analytical expression is developed to predict the threshold voltage of a small-geometry MOSFET. The expression includes the effects of field doping encroachment at the channel edges, and charge sharing with the source and drain regions.
Keywords :
Channel bank filters; Chaos; Doping; Electrodes; Geometry; MOS devices; MOSFET circuits; Semiconductor process modeling; Solid modeling; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20776
