Title :
Annealing of ion implanted silicon using scanned laser and electron beams
Author_Institution :
Stanford University, Stanford, CA, USA
fDate :
9/1/1979 12:00:00 AM
Keywords :
Electron-beam applications; Heat treatment; Laser applications, materials processing; Semiconductor defects; Silicon materials/devices; Amorphous silicon; Annealing; Electron beams; Laboratories; Laser beams; Laser modes; Pulsed laser deposition; Semiconductor lasers; Solid lasers; Telephony;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1979.1070304
