Title :
InGaAs–InP Photodiodes With High Responsivity and High Saturation Power
Author :
Wang, Xin ; Duan, Ning ; Chen, Hao ; Campbell, J.C.
Author_Institution :
Univ. of Virginia, Charlottesville
Abstract :
InGaAs-InP modified charge compensated uni- traveling carrier photodiodes with both absorbing and nonabsorbing depleted region are demonstrated. The fiber-coupled external quantum efficiency was 60% (responsivity at 1550 nm = 0.75 A/W). A 40-mum-diameter photodiode achieved 14-GHz bandwidth and 25-dBm RF output power and a 20-mum-diameter photodiode exhibited 30-GHz bandwidth and 15.5-dBm RF output power. The saturation current-bandwidth products are 1820 mA ldr GHz and 1560 mA GHz for the 40-mum-diameter and 40-mum-diameter devices, respectively.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; optical fibre couplers; photodiodes; InGaAs-InP - Interface; RF output power; absorbing depleted region; fiber-coupled external quantum efficiency; frequency 14 GHz; frequency 30 GHz; modified charge compensated unitraveling carrier photodiodes; nonabsorbing depleted region; responsivity; saturation current-bandwidth products; saturation power; size 20 mum; size 40 mum; wavelength 1550 nm; Bandwidth; Electrons; Indium phosphide; Optical fiber communication; Photoconductivity; Photodetectors; Photodiodes; Power generation; Radio frequency; Thermal conductivity; Frequency response; high-power photodetectors; photocurrent; photodetectors; photodiodes; responsivity; saturation current; space-charge effect;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.902274
