DocumentCode :
1079629
Title :
The size effect of liftoff metallization of sputtered aluminum films
Author :
Serikawa, Tadashi ; Sakurai, Tetsuma
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume :
29
Issue :
5
fYear :
1982
fDate :
5/1/1982 12:00:00 AM
Firstpage :
834
Lastpage :
837
Abstract :
Liftoff metallization of sputtered aluminum films successfully produces small patterns with tapered sidewalls. In this metallization, a size effect occurs wherein pattern height is influenced by pattern width. This article reports experiments regarding size effect dependences on liftoff parameters of pattern width, film thickness, photoresist thickness, and sputtering argon pressure. The size effect is favorably suppressed by reducting photoresist thickness and sputtering argon pressure. In addition, the effect is discussed by a model taking into account shadowing of sputtered atoms due to photoresist patterns and aluminum film itself deposited on the photoresist patterns.
Keywords :
Aluminum; Argon; Extraterrestrial measurements; Metallization; Resists; Scanning electron microscopy; Silicon; Sputtering; Substrates; Ultrasonic variables measurement;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20786
Filename :
1482283
Link To Document :
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