• DocumentCode
    1079649
  • Title

    An 8-bit, 4-phase surface channel charge-coupled device on InP

  • Author

    Lile, D.L. ; Collins, David A.

  • Author_Institution
    Naval Ocean Systems Center, San Diego, CA
  • Volume
    29
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    842
  • Lastpage
    845
  • Abstract
    An 8-bit, 4-phase insulated-gate CCD on bulk p-type InP is reported. The device, based on a two-level 10-µm long overlapping gate design, uses plasma-enhanced CVD SiO2for gate isolation and ion implantation to define the input/output diodes and the channel stop. Operating at ∼ 1 MHz in the surface channel mode with ∼ 20 percent full well fat zero background, these devices have exhibited values of CTE gsim 0.998/transfer.
  • Keywords
    Annealing; Charge coupled devices; Gallium arsenide; Indium phosphide; Magnetic separation; Optical imaging; Optical sensors; Optical surface waves; Semiconductor diodes; Semiconductor materials;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20788
  • Filename
    1482285
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1079649