Title :
An 8-bit, 4-phase surface channel charge-coupled device on InP
Author :
Lile, D.L. ; Collins, David A.
Author_Institution :
Naval Ocean Systems Center, San Diego, CA
fDate :
5/1/1982 12:00:00 AM
Abstract :
An 8-bit, 4-phase insulated-gate CCD on bulk p-type InP is reported. The device, based on a two-level 10-µm long overlapping gate design, uses plasma-enhanced CVD SiO2for gate isolation and ion implantation to define the input/output diodes and the channel stop. Operating at ∼ 1 MHz in the surface channel mode with ∼ 20 percent full well fat zero background, these devices have exhibited values of CTE gsim 0.998/transfer.
Keywords :
Annealing; Charge coupled devices; Gallium arsenide; Indium phosphide; Magnetic separation; Optical imaging; Optical sensors; Optical surface waves; Semiconductor diodes; Semiconductor materials;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20788
