Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

This paper presents a detailed Monte Carlo study of the optimization of the dopant segregation (DS) layer in n-type Schottky barrier (SB)-MOSFET. It is shown that with a careful control of the DS layer parameters, dopant concentration (N_dop), and length (L_dop), the performance of the devices is significantly enhanced. The presence of the DS layer induces crucial effects in the injection processes at the Schottky contacts. The benefits of increasing the length and the doping level of the DS layer are studied from the microscopic point of view (transit times, average number of scatterings). The effect of varying these parameters is also analyzed through the nonquasi-static parameters of the small signal equivalent circuit, which can be useful for designers to improve the reliability of the SB-MOSFET technology.