Potential distributions in metal—Semiconductor and p-i-n structures on a-Si:H by capacitive techniques

and characteristics have been used to find the barrier profile and depletion width in several Schottky (i-n⁺) structures on a-Si: H. Depletion widths for Pd and Cr Schottky structures are estimated to be around 0.28 and 0.21 µm, respectively. Dark measurements on these structures do not show the trends expected from the semiconductor behavior of the region. Instead, trap controlled current conduction in the layer fits the dark characteristics. Dark data further support this observation. Trends in the capacitance measurements on p-i-n structures have also been explained on the basis of the above model.