Title :
A 2-D analytical solution for SCEs in DG MOSFETs
Author :
Liang, Xiaoping ; Taur, Yuan
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, La Jolla, CA, USA
Abstract :
A two-dimensional (2-D) analytical solution of electrostatic potential is derived for undoped (or lightly doped) double-gate (DG) MOSFETs in the subthreshold region by solving Poissons equation in a 2-D boundary value problem. It is shown that the subthreshold current, short-channel threshold voltage rolloff and subthreshold slope predicted by the analytical solution are in close agreement with 2-D numerical simulation results for both symmetric and asymmetric DG MOSFETs without the need of any fitting parameters. The analytical model not only provides useful physics insight into short-channel effects, but also serves as basis for compact modeling of DG MOSFETs.
Keywords :
MOSFET; Poisson equation; boundary-value problems; electrostatics; semiconductor device models; 2D boundary value problem; Poissons equation; compact modeling; double-gate MOSFET; electrostatic potential; fitting parameters; short-channel effects; short-channel threshold voltage; subthreshold current; subthreshold slope; Analytical models; Boundary value problems; Electrostatic analysis; MOSFETs; Numerical simulation; Physics; Poisson equations; Subthreshold current; Threshold voltage; Two dimensional displays; MOSFETs; SCE; short-channel effect; threshold voltage roll-off;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.832707
