DocumentCode :
10798
Title :
Determination of Quantum Efficiency in In 
Ga 
As-InP-Based APDs
Author :
Clark, William R. ; Vaccaro, Ken ; Waters, William D. ; Gribbon, Celine L. ; Krejca, Brian D.
Author_Institution :
OptoGration, Inc., Wilmington, MA, USA
Volume :
32
Issue :
24
fYear :
2014
fDate :
Dec.15, 15 2014
Firstpage :
4780
Lastpage :
4784
Abstract :
A method to precisely determine the quantum efficiency and primary photocurrent in avalanche photodiodes (APDs) is presented based on a linear relationship between excess noise factor F and gain, M. The new method is used to accurately compare performance of modern APD designs when nonlocal impact ionization effects govern the relationship between noise and gain.
Keywords :
III-V semiconductors; avalanche photodiodes; impact ionisation; indium compounds; optical design techniques; optical materials; optical noise; photoconductivity; photoemission; APD designs; In0.53Ga0.47As-InP; In0.53Ga0.47As-InP-based APD; avalanche photodiodes; excess noise factor; gain factor; linear relationship; nonlocal impact ionization; primary photocurrent; quantum efficiency; Avalanche photodiodes; Current measurement; Equations; Indium compounds; Mathematical model; Noise; Noise measurement; Avalanche photodiode (APD); avalanche photodiode; excess noise factor; impact ionization; near-infrared detection;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2014.2364744
Filename :
6936306
Link To Document :
