Power semiconductor switching devices—A comparison based on inductive switching

In this paper, a comparison of the switching efficiency of MOSFET´s Darlington transistors, field controlled thyristors (FCT´s), and gate turn-off thyristors (GTO´s) will be made for devices with breakdown voltages between 100 and 1000 V. The comparison is made as a function of switching frequency with a 50-percent duty cycle and for devices of the same area, carrying the same current. Conclusions are presented as to the most appropriate device for different combinations of breakdown voltage and switching frequency requirements.