DocumentCode :
1079927
Title :
Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
Author :
Delagebeaudeuf, Daniel ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, Orsay, France
Volume :
29
Issue :
6
fYear :
1982
fDate :
6/1/1982 12:00:00 AM
Firstpage :
955
Lastpage :
960
Abstract :
Theoretical calculations have been developed for a two-dimensional electron gas FET (TEGFET) constituted by a AlGaAs (n)-GaAs (n-or p-) heterostructure in which the Schottky gate is deposited on the AlGaAs(n) top layer. The theory takes into account: i) the subband splitting in the two-dimensional electron gas (2-DEG); and ii) the existence of an undoped AlGaAs spacer layer which has been found to enhance the electron mobility. The sheet carrier concentration of the TEGFET has been calculated, and a simple analytical formula has been established for the charge control in large and small gate FET.
Keywords :
Electron mobility; FETs; Gallium arsenide; HEMTs; Helium; Heterojunctions; Impurities; MODFETs; Noise figure; Superlattices;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20813
Filename :
1482310
Link To Document :
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