1/f noise in n-channel silicon-gate MOS transistors

It is found that equivalent gate noise power for l/f noise in n-channel silicon-gate MOS transistors at near zero drain voltage at room temperature is empirically described by two noise terms, which vary as is gate voltage, VTis threshold Voltage, and Coxis gate-oxide capacitance per unit area. Unification of carrier-density fluctuation (McWhorter\´s model)and mobility fluctuation (Hooge\´s model) can account for the experimental data. The comparison between the theory and experiment shows that the carrier fluctuation term K2is proportional to oxide-trap density at Fermi-level. The mobility fluctuation term K1is correlated to K2, being proportional to . The origin of this correlation is yet to be clarified.