Effects of spacer thickness on noise performance of bipolar transistors

Author

Lee, Wai-Kit ; Lam, Sang ; Chan, Mansun

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China

Volume

51

Issue

9

fYear

2004

Firstpage

1534

Lastpage

1537

Abstract

The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NF_min) derived from the Y-parameters as well as the base (r_B) and emitter resistance (r_E) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (R_n), optimum source admittance (Y_sop), and the associated gain (G_A,assc) are also given in this brief. To achieve the minimum value of NF_min, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.

Keywords

heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; V-parameters; bipolar junction transistor; device simulation; emitter resistance; emitter widths; noise performance; operation frequencies; source admittance; spacer thickness; Bipolar transistors; Dielectric substrates; Doping profiles; Frequency; Geometry; Germanium silicon alloys; Hafnium oxide; Heterojunction bipolar transistors; Noise figure; Silicon germanium; Bipolar transistors; SiGe heterojunction bipolar transistors; modeling; spacer thickness;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.833959

Filename

1325861