Title :
Effects of spacer thickness on noise performance of bipolar transistors
Author :
Lee, Wai-Kit ; Lam, Sang ; Chan, Mansun
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
The effects of spacer thickness on noise performance of a bipolar junction transistor with different emitter widths and operation frequencies are examined. The minimum noise figure (NFmin) derived from the Y-parameters as well as the base (rB) and emitter resistance (rE) obtained from the device simulation is used as a measure of noise characteristics. Furthermore, the noise resistance (Rn), optimum source admittance (Ysop), and the associated gain (GA,assc) are also given in this brief. To achieve the minimum value of NFmin, the spacer thickness should be targeted to an optimal value, and its value is frequency and geometry dependent.
Keywords :
heterojunction bipolar transistors; semiconductor device models; semiconductor device noise; V-parameters; bipolar junction transistor; device simulation; emitter resistance; emitter widths; noise performance; operation frequencies; source admittance; spacer thickness; Bipolar transistors; Dielectric substrates; Doping profiles; Frequency; Geometry; Germanium silicon alloys; Hafnium oxide; Heterojunction bipolar transistors; Noise figure; Silicon germanium; Bipolar transistors; SiGe heterojunction bipolar transistors; modeling; spacer thickness;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.833959
