• DocumentCode
    1079986
  • Title

    Optimum doping profile of power MOSFET epitaxial layer

  • Author

    Xing-bi Chen ; Hu, Chenming

  • Author_Institution
    University of California, Berkeley, CA
  • Volume
    29
  • Issue
    6
  • fYear
    1982
  • fDate
    6/1/1982 12:00:00 AM
  • Firstpage
    985
  • Lastpage
    987
  • Abstract
    The epitaxial layer resistance of a MOSFET can be slightly reduced by using an optimum doping profile, which exhibits a minimum in the upper half of the layer when the layer thickness is large compared to the cell-to-ceU spacing. A gradual transition from the n epitaxial layer to the n+ substrate is desirable. When current spreading is significant, the resistance may rise as VB2rather than VB2.5.
  • Keywords
    Avalanche breakdown; Bipolar transistors; Current density; Doping profiles; Electron traps; Epitaxial layers; Laboratories; MOSFET circuits; Power MOSFET; Substrates;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20818
  • Filename
    1482315
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1079986