DocumentCode :
1080049
Title :
Study of the effect of the C/sub max//C/sub min/ ratio on the performance of back-to-back Barrier-N-N (bbBNN) varactor frequency multipliers
Author :
Choudhury, Debabani ; Raisanen, Antti V. ; Smith, R. Peter ; Frerking, Margaret A.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
4
Issue :
4
fYear :
1994
fDate :
4/1/1994 12:00:00 AM
Firstpage :
101
Lastpage :
103
Abstract :
The effect of the C/sub max//C/sub min/ ratio on the performance of planar back-to-back Barrier-N-N/sup +/ (bbBNN) frequency multipliers is studied. A simplified physical model of the device is used to relate the electrical characteristics to the material and the structural parameters. Multiplication efficiency is evaluated using a large signal analysis approach. Results indicate that if the optimum device size for a given frequency is used, a high C/sub max//C/sub min/ ratio results in high efficiency.<>
Keywords :
frequency multipliers; semiconductor device models; varactors; C/sub max//C/sub min/ ratio; back-to-back Barrier-N-N; efficiency; electrical characteristics; large signal analysis approach; optimum device size; physical model; structural parameters; varactor frequency multipliers; Doping; Gallium arsenide; Neodymium; Parasitic capacitance; Radio frequency; Schottky barriers; Semiconductor process modeling; Signal analysis; Varactors; Voltage;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.282572
Filename :
282572
Link To Document :
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