Title :
A new nonlinear I(V) model for FET devices including breakdown effects
Author :
Teyssier, J.P. ; Viaud, J.P. ; Quéré, R.
Author_Institution :
IRCOM, Limoges Univ., France
fDate :
4/1/1994 12:00:00 AM
Abstract :
The nonlinear FET I(V) behavior, including gate conduction and breakdown, has been investigated using a pulse measurement setup. An excessive current source has been observed in addition to the usual gate breakdown current. From these measurements, a nonlinear model including the conduction, breakdown, and excessive current phenomenon is proposed for the nonlinear simulation of high-power circuits. This I(V) model presents an improvement in terms of load line prediction and limits for the high-power nonlinear circuit design.<>
Keywords :
electric breakdown of solids; field effect transistors; power transistors; semiconductor device models; solid-state microwave devices; FET devices; breakdown effects; excessive current source; gate breakdown; gate conduction; high-power circuits; load line prediction; microwave devices; nonlinear I(V) model; pulse measurement setup; Circuit simulation; Current measurement; Electric breakdown; FETs; Intrusion detection; MESFETs; Nonlinear circuits; Predictive models; Pulse measurements; User-generated content;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
