DocumentCode
1080123
Title
500-GHz characterization of an optoelectronic S-parameter test structure
Author
Frankel, Michael Y.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
4
Issue
4
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
118
Lastpage
120
Abstract
We propose a compact, high-bandwidth optoelectronic S-parameter test structure and characterize its performance via electrooptic sampling over a 500-GHz frequency range. The test structure is shown to be well-behaved over a 300-GHz bandwidth, with further improvement potential. Active devices can be wirebonded into the structure for characterization, or they can be integrated on-wafer for improved performance.<>
Keywords
S-parameters; microwave measurement; optoelectronic devices; semiconductor device testing; solid-state microwave devices; submillimetre wave devices; test equipment; 300 GHz; 500 GHz; 500-GHz characterization; active device wirebonding; electrooptic sampling; high-bandwidth; on-wafer integration; optoelectronic S-parameter test structure; Attenuation; Bandwidth; Frequency; Personal communication networks; Pulse generation; Pulse measurements; Scattering parameters; Testing; Transmission line discontinuities; Transmission line measurements;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.282578
Filename
282578
Link To Document