Title :
A DC-12 GHz monolithic GaAsFET distributed amplifier
Author :
Strid, Eric W. ; Gleason, Reed K.
Author_Institution :
Tektronix, Inc., Beaverton, OR
fDate :
7/1/1982 12:00:00 AM
Abstract :
A monolithic balanced traveling-wave amplifier stage using GaAs MESFET´s is demonstrated. This amplifier achieves 7-9-dB gain with about 40-ps risetime and a -3-dB bandwidth of 12 GHz, on a 0.91 × 0.97-mm die. Its gain versus frequency is very flat, and |S11|, |S12|, and |S22| are less than 0.2 from 0-18 GHz. S-parameter uniformity and yield data are measured on-wafer with a special hybrid wafer probe.
Keywords :
Bandwidth; Distributed amplifiers; FETs; Frequency; Gallium arsenide; MESFETs; Probes; Propagation losses; Scattering parameters; Topology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1982.20835
