DocumentCode
1080169
Title
A monolithic GaAs 1 - 13-GHz traveling-wave amplifier
Author
Ayasli, Yalcin ; Mozzi, Robert L. ; Vorhaus, James L. ; Reynolds, Leonard D. ; Pucel, Robert A.
Author_Institution
Raytheon Research Division, Waltham, MA
Volume
29
Issue
7
fYear
1982
fDate
7/1/1982 12:00:00 AM
Firstpage
1072
Lastpage
1077
Abstract
This paper describes a monolithic GaAs traveling-wave amplifier with 9-dB gain and ± 1-dB gain flatness in the 1-13-GHz frequency range. The circuit is realized in monolithic form on a 0.1-mm GaAs substrate with 50-Ω input and output lines. In this approach, GaAs FET´s periodically load input and output microstrip lines and provide the coupling between them with proper phase through their transconductance. Experimental results and the circuit details of such a structure are discussed. Initial results of a noise analysis and predictions on the noise performance are also given.
Keywords
Capacitance; Circuit noise; Coupling circuits; Distributed parameter circuits; FETs; Frequency; Gallium arsenide; Impedance; Transconductance; Transmission line theory;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20836
Filename
1482333
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