• DocumentCode
    1080183
  • Title

    GaInAsP/InP DH lasers with a chemically etched facet

  • Author

    Iga, Kenichi ; Pollack, Martin A. ; Miller, B.I. ; Martin, R.J.

  • Author_Institution
    Bell Telephone Laboratories, Inc., Holmdel, NJ, USA
  • Volume
    16
  • Issue
    10
  • fYear
    1980
  • fDate
    10/1/1980 12:00:00 AM
  • Firstpage
    1044
  • Lastpage
    1047
  • Abstract
    We describe a new configuration and novel fabrication method for GaInAsP/InP DH lasers in which one of the facet mirrors is chemically etched and the other one is formed by cleaving. The etched facet is fabricated monolithically by wet chemical etching in a solution of HCl:CH3COOH:H2O2= (1:2:1). Broad-area contact lasers of this type operating at room temperature at a wavelength of \\sim 1.3 \\mu m have been demonstrated.
  • Keywords
    Gallium materials/lasers; Chemical lasers; DH-HEMTs; Fiber lasers; Human computer interaction; Indium phosphide; Laser modes; Mirrors; Optical device fabrication; Optical fibers; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.1980.1070360
  • Filename
    1070360
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080183