DocumentCode :
1080216
Title :
Saturated resistor load for GaAs integrated circuits
Author :
Lee, Chien-Ping ; Welch, Bryant M. ; Zucca, Ricardo
Author_Institution :
Rockwell International Microelectronics, Thousand Oaks, CA
Volume :
29
Issue :
7
fYear :
1982
fDate :
7/1/1982 12:00:00 AM
Firstpage :
1103
Lastpage :
1109
Abstract :
Saturated resistors, two-terminal load devices, have been fabricated and evaluated as pull-up loads for GaAs digital integrated circuits. The saturated resistor loads exhibit superior device characteristics compared with FET active loads. Up to 100-percent improvement in the uniformity Of the saturation current has been obtained. Ring oscillators with saturated resistor pull-up loads have shown ∼ 20-percent lower speed-power products than ring oscillators with FET active loads. This superior circuit performance is attributed to 1)no gate capacitance, and 2) less backgating effect. Reliability studies using accelerated aging have shown that circuits are more reliable when saturated resistor loads are used.
Keywords :
Circuit optimization; Digital integrated circuits; FETs; Fabrication; Gallium arsenide; Integrated circuit reliability; Logic circuits; Logic devices; Resistors; Ring oscillators;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20840
Filename :
1482337
Link To Document :
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