DocumentCode
1080216
Title
Saturated resistor load for GaAs integrated circuits
Author
Lee, Chien-Ping ; Welch, Bryant M. ; Zucca, Ricardo
Author_Institution
Rockwell International Microelectronics, Thousand Oaks, CA
Volume
29
Issue
7
fYear
1982
fDate
7/1/1982 12:00:00 AM
Firstpage
1103
Lastpage
1109
Abstract
Saturated resistors, two-terminal load devices, have been fabricated and evaluated as pull-up loads for GaAs digital integrated circuits. The saturated resistor loads exhibit superior device characteristics compared with FET active loads. Up to 100-percent improvement in the uniformity Of the saturation current has been obtained. Ring oscillators with saturated resistor pull-up loads have shown ∼ 20-percent lower speed-power products than ring oscillators with FET active loads. This superior circuit performance is attributed to 1)no gate capacitance, and 2) less backgating effect. Reliability studies using accelerated aging have shown that circuits are more reliable when saturated resistor loads are used.
Keywords
Circuit optimization; Digital integrated circuits; FETs; Fabrication; Gallium arsenide; Integrated circuit reliability; Logic circuits; Logic devices; Resistors; Ring oscillators;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20840
Filename
1482337
Link To Document