DocumentCode
1080234
Title
RF Characterization of Zero-Biased Photodiodes
Author
Godinez, Modesto E. ; McDermitt, Christopher S. ; Hastings, Alexander S. ; Parent, Mark G. ; Bucholtz, Frank
Author_Institution
SFA, Inc., Crofton, MD, USA
Volume
26
Issue
24
fYear
2008
Firstpage
3829
Lastpage
3834
Abstract
The characteristics of zero-biased InGaAs p-i-n photodiodes were studied for use as optical transducers in an in situ phased array radar calibrator. Radio frequency (RF) operation is especially important for the intended application in which the zero-biased photodiodes drive patch antennas embedded in a radome. The photodiodes act as sources for real-time calibration of the phase and amplitude of each array element and will operate with only optical input from a modulated optical fiber link. Unfortunately, little is known of the RF performance of photodiodes operated without voltage bias. In this paper, both the dc and RF performance of a particular photodiode were studied to determine the optimum operating conditions and to understand the type and severity of any limitations.
Keywords
III-V semiconductors; antenna phased arrays; calibration; gallium arsenide; indium compounds; optical links; p-i-n photodiodes; phased array radar; photodetectors; InGaAs; in situ phased array radar calibrator; modulated optical fiber link; optical transducers; photodetectors; radiofrequency operation; real-time calibration; zero-biased p-i-n photodiodes; Indium gallium arsenide; Laser radar; Optical arrays; Optical modulation; PIN photodiodes; Patch antennas; Phased arrays; Radar antennas; Radio frequency; Transducers; Calibration; phased array radar; photodetectors; photodiodes; radio frequency (RF); zero-bias;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2008.927794
Filename
4758666
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