• DocumentCode
    1080234
  • Title

    RF Characterization of Zero-Biased Photodiodes

  • Author

    Godinez, Modesto E. ; McDermitt, Christopher S. ; Hastings, Alexander S. ; Parent, Mark G. ; Bucholtz, Frank

  • Author_Institution
    SFA, Inc., Crofton, MD, USA
  • Volume
    26
  • Issue
    24
  • fYear
    2008
  • Firstpage
    3829
  • Lastpage
    3834
  • Abstract
    The characteristics of zero-biased InGaAs p-i-n photodiodes were studied for use as optical transducers in an in situ phased array radar calibrator. Radio frequency (RF) operation is especially important for the intended application in which the zero-biased photodiodes drive patch antennas embedded in a radome. The photodiodes act as sources for real-time calibration of the phase and amplitude of each array element and will operate with only optical input from a modulated optical fiber link. Unfortunately, little is known of the RF performance of photodiodes operated without voltage bias. In this paper, both the dc and RF performance of a particular photodiode were studied to determine the optimum operating conditions and to understand the type and severity of any limitations.
  • Keywords
    III-V semiconductors; antenna phased arrays; calibration; gallium arsenide; indium compounds; optical links; p-i-n photodiodes; phased array radar; photodetectors; InGaAs; in situ phased array radar calibrator; modulated optical fiber link; optical transducers; photodetectors; radiofrequency operation; real-time calibration; zero-biased p-i-n photodiodes; Indium gallium arsenide; Laser radar; Optical arrays; Optical modulation; PIN photodiodes; Patch antennas; Phased arrays; Radar antennas; Radio frequency; Transducers; Calibration; phased array radar; photodetectors; photodiodes; radio frequency (RF); zero-bias;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2008.927794
  • Filename
    4758666