• DocumentCode
    1080411
  • Title

    Selfaligned InGaAs/InP heterostructure bipolar transistors

  • Author

    Feygenson, A. ; Temkin, H. ; Tsang, W.T. ; Yang, L. ; Yadvish, R.D. ; Scortino, P.F.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    27
  • Issue
    13
  • fYear
    1991
  • fDate
    6/20/1991 12:00:00 AM
  • Firstpage
    1116
  • Lastpage
    1118
  • Abstract
    InGaAs/InP heterostructure bipolar transistors have been realised using a new selfaligned process. Transistor wafers were grown by chemical beam epitaxy. Ideality factors close to unity were measured for emitter-base and collector-base diodes. The resulting devices exhibit nearly constant gain over four orders of magnitude of collector current densities, from j=1.5*10-4 A/cm2 to 1.5 A/cm2.
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; CBE; HBT; InGaAs-InP; chemical beam epitaxy; device fabrication; heterostructure bipolar transistors; selfaligned process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910697
  • Filename
    132699
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080411