Title :
Scaling, small numbers and randomness in semiconductors
Author :
Keyes, Robert W.
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
The randomness in the distribution of dopant atoms in semiconductors becomes increasingly important as devices are miniaturized and voltages are reduced. Fluctuations in the distribution have serious effects on noise margins in advanced devices and constitute a limit to the size of transistors built with present fabrication methods. In this article, the author explores ways to avoid those limits.<>
Keywords :
doping profiles; epitaxial growth; impurity distribution; integrated circuit technology; semiconductor growth; device scaling; dopant atoms distribution; fabrication methods; noise margins; random distribution; semiconductors; transistor size limitations; Atomic layer deposition; Doping; Fabrication; Fluctuations; Semiconductor device manufacture; Semiconductor device noise; Semiconductor devices; Surface treatment; Transistors; Voltage;
Journal_Title :
Circuits and Devices Magazine, IEEE