DocumentCode :
1080436
Title :
Scaling, small numbers and randomness in semiconductors
Author :
Keyes, Robert W.
Author_Institution :
Res. Div., IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume :
10
Issue :
3
fYear :
1994
fDate :
5/1/1994 12:00:00 AM
Firstpage :
28
Lastpage :
31
Abstract :
The randomness in the distribution of dopant atoms in semiconductors becomes increasingly important as devices are miniaturized and voltages are reduced. Fluctuations in the distribution have serious effects on noise margins in advanced devices and constitute a limit to the size of transistors built with present fabrication methods. In this article, the author explores ways to avoid those limits.<>
Keywords :
doping profiles; epitaxial growth; impurity distribution; integrated circuit technology; semiconductor growth; device scaling; dopant atoms distribution; fabrication methods; noise margins; random distribution; semiconductors; transistor size limitations; Atomic layer deposition; Doping; Fabrication; Fluctuations; Semiconductor device manufacture; Semiconductor device noise; Semiconductor devices; Surface treatment; Transistors; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Devices Magazine, IEEE
Publisher :
ieee
ISSN :
8755-3996
Type :
jour
DOI :
10.1109/101.283654
Filename :
283654
Link To Document :
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