DocumentCode
1080442
Title
Analysis of static characteristics of a bipolar-mode SIT (BSIT)
Author
Nishizawa, Jun-ichi ; Ohmi, Tadahiro ; Chen, Hsjao-liang
Author_Institution
Tohoku University, Sendai, Japan
Volume
29
Issue
8
fYear
1982
fDate
8/1/1982 12:00:00 AM
Firstpage
1233
Lastpage
1244
Abstract
The three-dimensional effect of the potential profile in the channel of a bipolar-mode SIT (BSIT) is analytically discussed by using a very simple model. The basic performance of a BSIT is fundamentally determined by the potential barrier height at the intrinsic gate at the turn-off state, so that the effect of various structure parameters on the barrier height is discussed in detail to introduce the design rule of a BSIT. The operational principle of a BSIT is studied by using the two-dimensional numerical analysis, concentrating on the effect of geometrical parameter and impurity concentration on the potential distribution, electron, and hole density in the channel, as well as terminal characteristics.
Keywords
Capacitance; Charge carrier processes; Current density; Electrons; Impurities; Logic devices; Numerical analysis; Poisson equations; Transconductance; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20862
Filename
1482359
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