DocumentCode
1080505
Title
Unidirectional transfer properties of the plasma-coupled shift register
Author
Sakaue, Masahiro ; Tamama, Teruo ; Mizushima, Yoshihiko
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
29
Issue
8
fYear
1982
fDate
8/1/1982 12:00:00 AM
Firstpage
1276
Lastpage
1283
Abstract
Features of bipolar-type shift register (SR), utilizing a plasma-coupled device (PCD) for transferring potential variation through the bulk are described. The coupling-resistance parameter was studied to estimate the shift-register operation. To analyze the coupling resistance, an equivalent PCD circuit model was deduced from the device structure. The model sufficiently accounts for the features of unidirectional propagation based on an essentially geometrical design. To attain preferentially unidirectional signal propagation, an anti-symmetrical element configuration and an extended probe structure were fabricated, and the unidirectional transfer effect was investigated theoretically as well as experimentally. The relation between the operation margin and the device parameter, cell pitch length, and substrate resistivity, are discussed utilizing the antisymmetrical concept. High packing density, low operation voltage, and fewer shift pulses were predicted to be possible from the analytical estimations and were confirmed by the experimental results.
Keywords
Bipolar transistors; Charge coupled devices; Coupling circuits; Electrodes; Low voltage; Plasma devices; Plasma properties; Shift registers; Strontium; Switches;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20867
Filename
1482364
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