• DocumentCode
    1080505
  • Title

    Unidirectional transfer properties of the plasma-coupled shift register

  • Author

    Sakaue, Masahiro ; Tamama, Teruo ; Mizushima, Yoshihiko

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    29
  • Issue
    8
  • fYear
    1982
  • fDate
    8/1/1982 12:00:00 AM
  • Firstpage
    1276
  • Lastpage
    1283
  • Abstract
    Features of bipolar-type shift register (SR), utilizing a plasma-coupled device (PCD) for transferring potential variation through the bulk are described. The coupling-resistance parameter was studied to estimate the shift-register operation. To analyze the coupling resistance, an equivalent PCD circuit model was deduced from the device structure. The model sufficiently accounts for the features of unidirectional propagation based on an essentially geometrical design. To attain preferentially unidirectional signal propagation, an anti-symmetrical element configuration and an extended probe structure were fabricated, and the unidirectional transfer effect was investigated theoretically as well as experimentally. The relation between the operation margin and the device parameter, cell pitch length, and substrate resistivity, are discussed utilizing the antisymmetrical concept. High packing density, low operation voltage, and fewer shift pulses were predicted to be possible from the analytical estimations and were confirmed by the experimental results.
  • Keywords
    Bipolar transistors; Charge coupled devices; Coupling circuits; Electrodes; Low voltage; Plasma devices; Plasma properties; Shift registers; Strontium; Switches;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20867
  • Filename
    1482364