• DocumentCode
    1080517
  • Title

    Some general recombination statistics for semiconductor surfaces

  • Author

    Landsberg, P.T.

  • Author_Institution
    University of Southampton, Southampton, England
  • Volume
    29
  • Issue
    8
  • fYear
    1982
  • fDate
    8/1/1982 12:00:00 AM
  • Firstpage
    1284
  • Lastpage
    1286
  • Abstract
    Trapping recombination by the usual phonon emission processes and by Auger processes can be combined to yield generalized Shockley-Read-Hall statistics. This has been generalized further to include a spectrum of trapping states, as well as the effect of "extra carriers." These are carriers which do not come directly from, or go to, the main bands of the semiconductor considered. The result should be useful in devices, for example, in studies of surface recombination.
  • Keywords
    Charge carrier processes; Electron traps; Helium; Heterojunctions; Phonons; Photovoltaic cells; Radiative recombination; Spontaneous emission; Statistics; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20868
  • Filename
    1482365