DocumentCode
1080517
Title
Some general recombination statistics for semiconductor surfaces
Author
Landsberg, P.T.
Author_Institution
University of Southampton, Southampton, England
Volume
29
Issue
8
fYear
1982
fDate
8/1/1982 12:00:00 AM
Firstpage
1284
Lastpage
1286
Abstract
Trapping recombination by the usual phonon emission processes and by Auger processes can be combined to yield generalized Shockley-Read-Hall statistics. This has been generalized further to include a spectrum of trapping states, as well as the effect of "extra carriers." These are carriers which do not come directly from, or go to, the main bands of the semiconductor considered. The result should be useful in devices, for example, in studies of surface recombination.
Keywords
Charge carrier processes; Electron traps; Helium; Heterojunctions; Phonons; Photovoltaic cells; Radiative recombination; Spontaneous emission; Statistics; Steady-state;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1982.20868
Filename
1482365
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