Nondegenerate optical Kerr effect in semiconductors

Author

Sheik-Bahae, Mansoor ; Wang, J. ; Van Stryland, E.W.

Author_Institution

Center for Res. in Electro-Optics & Lasers, Univ. of Central Florida, Orlando, FL, USA

Volume

30

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

249

Lastpage

255

Abstract

We calculate the nondegenerate bound electronic nonlinear refractive index n₂(ω₁;ω₂) (i.e., an index change at frequency ω₁ due to the presence of a beam at frequency ω₂) in semiconductors. We calculate this nonlinearity and its dispersion using a Kramers-Kronig transformation on the calculated nondegenerate nonlinear absorption spectrum due to two-photon absorption, electronic Raman and optical Stark effects. The calculated n₂ values and their dispersion are compared to new experimental values for ZnSe and ZnS obtained using a 2-color Z-scan

Keywords

II-VI semiconductors; Kramers-Kronig relations; Raman spectra of inorganic solids; Stark effect; optical Kerr effect; optical dispersion; refractive index; zinc compounds; 2-color Z-scan; Kramers-Kronig transformation; ZnS; ZnSe; dispersion; electronic Raman effects; index change; nondegenerate bound electronic nonlinear refractive index; nondegenerate nonlinear absorption spectrum; nondegenerate optical Kerr effect; optical Stark effects; semiconductors; two-photon absorption; Absorption; Dispersion; Frequency; Kerr effect; Nonlinear optics; Optical refraction; Optical variables control; Refractive index; Stark effect; Zinc compounds;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.283767

Filename

283767