DocumentCode
1080581
Title
Millimetre wave performance of carbon-doped-base AlGaAs/GaAs HBTs
Author
Yang, L.W. ; Wright, P.D. ; Ko, S.K. ; Kaleta, A.
Author_Institution
Ford Microelectronics Inc., Colorado Springs, CO, USA
Volume
27
Issue
13
fYear
1991
fDate
6/20/1991 12:00:00 AM
Firstpage
1145
Lastpage
1147
Abstract
AlGaAs/GaAs HBTs with fT of 52 GHz and fmax of 85 GHz have been obtained using a heavily-carbon-doped base layer. The HBT epitaxial layers were prepared by low-pressure MOVPE using carbon tetrachloride as the carbon source. To the author´s knowledge, this work reports the first carbon-doped AlGaAs/GaAs HBTs with fT and fmax greater than 50 GHz.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; semiconductor doping; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 52 to 85 GHz; AlGaAs-GaAs:C; C doped base; EHF; HBT epitaxial layers; MM-wave device; carbon tetrachloride; low-pressure MOVPE; millimetre wave operation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910714
Filename
132716
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