• DocumentCode
    1080594
  • Title

    A high-frequency bipolar JFET I2L process

  • Author

    Lui, Sik K. ; Meyer, Robert G.

  • Author_Institution
    Trilogy Corporation, Santa Clara, CA
  • Volume
    29
  • Issue
    8
  • fYear
    1982
  • fDate
    8/1/1982 12:00:00 AM
  • Firstpage
    1319
  • Lastpage
    1323
  • Abstract
    A new monolithic process is described which allows simultaneous fabrication of high-speed ( f_{T} = 400 MHz) JFET\´s, high-frequency ( f_{T} = 4 GHz) bipolar transistors plus I2L logic ( t_{d} = 14 ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bipolar transistor with implanted base and emitter.
  • Keywords
    Bipolar transistors; CMOS technology; Capacitance; Capacitors; Fabrication; Implants; JFET circuits; Laboratories; Military computing; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20874
  • Filename
    1482371
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080594