DocumentCode :
1080594
Title :
A high-frequency bipolar JFET I2L process
Author :
Lui, Sik K. ; Meyer, Robert G.
Author_Institution :
Trilogy Corporation, Santa Clara, CA
Volume :
29
Issue :
8
fYear :
1982
fDate :
8/1/1982 12:00:00 AM
Firstpage :
1319
Lastpage :
1323
Abstract :
A new monolithic process is described which allows simultaneous fabrication of high-speed ( 
MHz) JFET\´s, high-frequency ( 
GHz) bipolar transistors plus I2L logic ( 
ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bipolar transistor with implanted base and emitter.
MHz) JFET\´s, high-frequency ( GHz) bipolar transistors plus I2L logic ( ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bipolar transistor with implanted base and emitter.Keywords :
Bipolar transistors; CMOS technology; Capacitance; Capacitors; Fabrication; Implants; JFET circuits; Laboratories; Military computing; Transconductance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1982.20874
Filename :
1482371
Link To Document :
