• DocumentCode
    1080603
  • Title

    High performance W-band InAlAs-InGaAs-InP HEMTs

  • Author

    Streit, D.C. ; Tan, K.L. ; Dia, R.M. ; Han, A.C. ; Liu, P.H. ; Yen, H.C. ; Chow, P.D.

  • Author_Institution
    TRW Electron. & Technol. Div., Redondo Beach, CA, USA
  • Volume
    27
  • Issue
    13
  • fYear
    1991
  • fDate
    6/20/1991 12:00:00 AM
  • Firstpage
    1149
  • Lastpage
    1150
  • Abstract
    0.15 mu m T-gate lattice-matched In0.52Al0.48As-In0.53Ga0.47As-InP HEMTs with a device minimum noise figure of 1.7 dB with 7.7 dB associated gain at 93 GHz have been fabricated. A single-ended active mixer was fabricated using these devices, and a conversion gain of 2.4 dB was measured with 7.3 dB single-sideband noise figure at 94 GHz. This is the first reported active mixer conversion gain at W-band.
  • Keywords
    III-V semiconductors; MMIC; aluminium compounds; electron device noise; gallium arsenide; high electron mobility transistors; indium compounds; mixers (circuits); solid-state microwave devices; 0.15 micron; 1.7 dB; 2.4 dB; 7.3 dB; 7.7 dB; 93 to 94 GHz; EHF; HEMTs; In 0.52Al 0.48As-In 0.53Ga 0.47As-InP; MM-wave device; MMIC application; T-gate; W-band; conversion gain; lattice-matched; millimetre wave operation; minimum noise figure; single-ended active mixer; single-sideband noise figure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910716
  • Filename
    132718
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080603