DocumentCode
1080618
Title
Correlation between linewidth rebroadening and low-frequency RIN enhancement in semiconductor lasers
Author
Gray, G.R. ; Agrawal, Govind P.
Author_Institution
Inst. of Opt., Rochester Univ., NY, USA
Volume
27
Issue
13
fYear
1991
fDate
6/20/1991 12:00:00 AM
Firstpage
1150
Lastpage
1152
Abstract
The observed correlation between the linewidth rebroadening and the low-frequency relative-intensity noise (RIN) enhancement at high operating power in nearly-singlemode semiconductor lasers is explained by using the two-mode rate equations which include both the self- and cross-saturation contributions to the nonlinear gain.
Keywords
electron device noise; laser theory; semiconductor junction lasers; spectral line breadth; cross-saturation; high operating power; linewidth rebroadening; low-frequency RIN enhancement; nearly-singlemode; nonlinear gain; relative-intensity noise; self-saturation; semiconductor lasers; two-mode rate equations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910717
Filename
132719
Link To Document