Title :
A suppression mechanism of Auger recombination effects in strained quantum wells induced by local negative curvature of the energy band structure
Author :
Lui, Wayne W. ; Yamanaka, Takayuki ; Yoshikuni, Yuzo ; Seki, Shunji ; Yokoyama, Kiyoyuki
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
2/1/1994 12:00:00 AM
Abstract :
An analytical method has been developed to calculate distribution of carriers that undergo CHHS Auger recombinations in semiconductors. From this approach, it is further discovered that holes with a local negative effective mass are, statistically, not favored in the CHHS Auger recombination process. As extended regions in valence subbands of compressively strained quantum well structures possess a negative curvature-and thus a local negative hole effective mass-this mechanism is identified to be a significant factor that suppresses Auger recombination effects in compressively strained quantum well laser diodes. This suppression mechanism is also observed and confirmed by recent Monte Carlo calculation results
Keywords :
Auger effect; carrier mobility; electron-hole recombination; semiconductor lasers; semiconductor quantum wells; Auger recombination effects; CHHS Auger recombinations; Monte Carlo calculation results; analytical method; carrier distribution; compressively strained quantum well laser diodes; energy band structure; local negative curvature; local negative effective mass holes; semiconductors; strained quantum wells; suppression mechanism; Charge carrier processes; Diode lasers; Effective mass; Helium; Instruments; Lagrangian functions; Monte Carlo methods; Radiative recombination; Spontaneous emission; Statistical distributions;
Journal_Title :
Quantum Electronics, IEEE Journal of
