A suppression mechanism of Auger recombination effects in strained quantum wells induced by local negative curvature of the energy band structure

Author

Lui, Wayne W. ; Yamanaka, Takayuki ; Yoshikuni, Yuzo ; Seki, Shunji ; Yokoyama, Kiyoyuki

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

Volume

30

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

392

Lastpage

398

Abstract

An analytical method has been developed to calculate distribution of carriers that undergo CHHS Auger recombinations in semiconductors. From this approach, it is further discovered that holes with a local negative effective mass are, statistically, not favored in the CHHS Auger recombination process. As extended regions in valence subbands of compressively strained quantum well structures possess a negative curvature-and thus a local negative hole effective mass-this mechanism is identified to be a significant factor that suppresses Auger recombination effects in compressively strained quantum well laser diodes. This suppression mechanism is also observed and confirmed by recent Monte Carlo calculation results

Keywords

Auger effect; carrier mobility; electron-hole recombination; semiconductor lasers; semiconductor quantum wells; Auger recombination effects; CHHS Auger recombinations; Monte Carlo calculation results; analytical method; carrier distribution; compressively strained quantum well laser diodes; energy band structure; local negative curvature; local negative effective mass holes; semiconductors; strained quantum wells; suppression mechanism; Charge carrier processes; Diode lasers; Effective mass; Helium; Instruments; Lagrangian functions; Monte Carlo methods; Radiative recombination; Spontaneous emission; Statistical distributions;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.283786

Filename

283786