Title :
Measurement of carrier escape rates, exciton saturation intensity, and saturation density in electrically biased multiple-quantum-well modulators
Author :
Sizer, T. ; Woodward, T.K. ; Keller, U. ; Sauer, K. ; Chiu, T.H. ; Sivco, D.L. ; Cho, A.Y.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
2/1/1994 12:00:00 AM
Abstract :
In this paper, we detail the results of exciton saturation intensity measurements on strained InAsP/InP and InGaAs/GaAs multiple quantum well modulators designed for 1 μm operation and under electrical bias as is required for device operation. Carrier escape times from the quantum well were also measured for both electrons and holes. These measurements allow the first experimental determination of the saturation density of the material under electrical bias. This density can also be calculated using a theoretical model proposed by Schmitt-Rink, et al. The experimentally measured density is in good agreement with this theoretical model
Keywords :
III-V semiconductors; carrier mobility; electro-optical devices; excitons; gallium arsenide; indium compounds; optical modulation; optical saturation; semiconductor quantum wells; 1 μm operation; 1 mum; GaAs-GaAs; InAsP-InP; InAsP/InP; InGaAs/GaAs; MQW modulators; Schmitt-Rink; carrier escape rates; carrier escape times; device operation; electrical bias; electrically biased multiple-quantum-well modulators; exciton saturation intensity; saturation density; strained multiple quantum well modulators; Buffer layers; Charge carrier processes; Clocks; Density measurement; Electric variables measurement; Excitons; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Intensity modulation; Optical materials; Power lasers; Quantum well devices;
Journal_Title :
Quantum Electronics, IEEE Journal of
