Measurement of carrier escape rates, exciton saturation intensity, and saturation density in electrically biased multiple-quantum-well modulators

Author

Sizer, T. ; Woodward, T.K. ; Keller, U. ; Sauer, K. ; Chiu, T.H. ; Sivco, D.L. ; Cho, A.Y.

Author_Institution

AT&T Bell Labs., Holmdel, NJ, USA

Volume

30

Issue

2

fYear

1994

fDate

2/1/1994 12:00:00 AM

Firstpage

399

Lastpage

407

Abstract

In this paper, we detail the results of exciton saturation intensity measurements on strained InAsP/InP and InGaAs/GaAs multiple quantum well modulators designed for 1 μm operation and under electrical bias as is required for device operation. Carrier escape times from the quantum well were also measured for both electrons and holes. These measurements allow the first experimental determination of the saturation density of the material under electrical bias. This density can also be calculated using a theoretical model proposed by Schmitt-Rink, et al. The experimentally measured density is in good agreement with this theoretical model

Keywords

III-V semiconductors; carrier mobility; electro-optical devices; excitons; gallium arsenide; indium compounds; optical modulation; optical saturation; semiconductor quantum wells; 1 μm operation; 1 mum; GaAs-GaAs; InAsP-InP; InAsP/InP; InGaAs/GaAs; MQW modulators; Schmitt-Rink; carrier escape rates; carrier escape times; device operation; electrical bias; electrically biased multiple-quantum-well modulators; exciton saturation intensity; saturation density; strained multiple quantum well modulators; Buffer layers; Charge carrier processes; Clocks; Density measurement; Electric variables measurement; Excitons; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Intensity modulation; Optical materials; Power lasers; Quantum well devices;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.283787

Filename

283787