Title :
Modeling of Wide-Bandgap Power Semiconductor Devices—Part II
Author :
Santi, Enrico ; Kang Peng ; Mantooth, Homer Alan ; Hudgins, Jerry L.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
Compact models of wide-bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs. Part II completes the review of SiC devices and covers gallium nitride devices as well.
Keywords :
III-V semiconductors; gallium compounds; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; GaN; MOSFETs; SiC; gallium nitride devices; silicon carbide power diodes; wide-bandgap power semiconductor device; Gallium nitride; Insulated gate bipolar transistors; JFETs; Logic gates; Mathematical model; Numerical models; Silicon carbide; Gallium nitride (GaN); modeling; power device modeling; power semiconductor devices; silicon carbide (SiC); wide-bandgap; wide-bandgap.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2373373
