• DocumentCode
    1080728
  • Title

    A planar InP/InGaAsP heterostructure avalanche photodiode

  • Author

    Shirai, Tatsunori ; Yamazaki, Susumu ; Kawata, Haruo ; Nakajima, Kazuo ; Kaneda, Takao

  • Author_Institution
    Fujitsu Laboratory Ltd., Nakahara, Japan
  • Volume
    29
  • Issue
    9
  • fYear
    1982
  • fDate
    9/1/1982 12:00:00 AM
  • Firstpage
    1404
  • Lastpage
    1407
  • Abstract
    A new guard-ring structure for InP/InGaAsP heterostructure avalanche photodiodes (APD´s) is presented. The guard ring consists of a linearly graded junction formed by beryllium ion implantation and two-step InP layers having different carrier concentrations (n-and n-layers grown on an InGaAsP layer). A planar InP/InGaAsP avalanche photodiode having this guard ring has a maximum avalanche gain of 110 at an initial photocurrent of 0.35 µA. The effectiveness of the guard ring is clearly discernible from the spot-scanned photoresponse of the diode.
  • Keywords
    Annealing; Avalanche photodiodes; Diodes; Implants; Indium phosphide; Ion implantation; Optical surface waves; P-n junctions; Photoconductivity; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1982.20889
  • Filename
    1482386
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1080728