Title :
Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers
Author :
Asonen, Harry ; Ovtchinnikov, A. ; Zhang, Guodong ; Näppi, J. ; Savolainen, Pekka ; Pessa, M.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
2/1/1994 12:00:00 AM
Abstract :
We report on the fabrication and characteristics of Al-free pump lasers for erbium-doped fiber amplifiers. Limitations of the two-dimensional passive waveguide approximation are discussed. With a closely optimized laser structure, a CW output power of 200 mW in the fundamental transverse mode was achieved. A slight change in “strength” of vertical mode confinement was shown to change significantly the onset of catastrophic optical damage of a mirror facet. Experimental observations for the longitudinal mode operation without mode jumps over a wide range of driving current are outlined. No mode jumps mere observed for long cavity lasers up to an output power level of 110 mW
Keywords :
III-V semiconductors; fibre lasers; gallium arsenide; laser accessories; laser cavity resonators; laser modes; mirrors; optical communication equipment; optical pumping; semiconductor lasers; 110 mW; 200 mW; 980 nm; Al-free pump lasers; CW output power; GaInAs-GaInAsP-GaInP; GaInAs/GaInAsP/GaInP pump lasers; catastrophic optical damage; driving current; erbium-doped fiber amplifiers; fundamental transverse mode; long cavity lasers; longitudinal mode operation; mirror facet; mode jumps; optimized laser structure; output power level; passive waveguide approximation; vertical mode confinement; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser excitation; Laser modes; Optical device fabrication; Optical waveguides; Power generation; Power lasers; Pump lasers; Waveguide lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
