DocumentCode
1080752
Title
Field effect semiconductor lasers
Author
An, Jyong Chi ; Cho, Yoshio ; Ohke, Shigeaki ; Matsuo, Yukito
Author_Institution
Institute of Scientific and Industrial Research, Osaka University, Osaka, Japan
Volume
16
Issue
12
fYear
1980
fDate
12/1/1980 12:00:00 AM
Firstpage
1300
Lastpage
1302
Abstract
A new semiconductor laser, the field-effect semiconductor (FES) laser, in which the both sides of the active region are surrounded by the burying layers with the reverse-biased p-n junctions is proposed. The proposed FES laser is a 
-switching device based on the direct control of laser beam intensity by the internal loss modulation through the field effect. The structure design and the operating principles of the device are discussed. Numerical solution shows that a pulsewidth shorter than 30 ps can be obtained.
-switching device based on the direct control of laser beam intensity by the internal loss modulation through the field effect. The structure design and the operating principles of the device are discussed. Numerical solution shows that a pulsewidth shorter than 30 ps can be obtained.Keywords
Q-switched lasers; Semiconductor lasers; Diodes; Epitaxial growth; Laser mode locking; Laser modes; Optical pulse generation; Optical pulses; P-n junctions; Semiconductor lasers; Space vector pulse width modulation; Voltage;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1980.1070412
Filename
1070412
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