DocumentCode :
108078
Title :
An 83.4% Peak Efficiency Single-Inductor Multiple-Output Based Adaptive Gate Biasing DC-DC Converter for Thermoelectric Energy Harvesting
Author :
Po-Hung Chen ; Fan, Philex Ming-Yan
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
62
Issue :
2
fYear :
2015
fDate :
Feb. 2015
Firstpage :
405
Lastpage :
412
Abstract :
This paper presents a 100 mV input, 500 mV output single-inductor multiple-output (SIMO) based step-up dc-dc converter with adaptive gate biasing (AGB) technique implemented in 0.18 μm CMOS technology for thermoelectric energy harvesting. The proposed AGB technique and near-threshold voltage (near- VTH) energy redistribution control (ERC) ensure high conversion efficiency over a wide range of load currents. The proposed method automatically reduces conduction and switching losses of power MOSFETs without the need for auxiliary power converters or additional off-chip inductors. The AGB technique reduces conduction and switching losses under heavy-load and light-load conditions, respectively. The experimental results show that the efficiency of the proposed converter is enhanced by 25.5% and 18% at output load currents of 1500 μA and 50 μA, respectively. The proposed step-up dc-dc converter achieves the lowest output voltage and provides the highest conversion efficiency of 83.4% to date in standard CMOS process for thermoelectric energy harvesting.
Keywords :
CMOS integrated circuits; DC-DC power convertors; energy harvesting; power MOSFET; thermoelectric conversion; AGB technique; CMOS technology; SIMO based step-up dc-dc converter; adaptive gate biasing dc-dc converter; adaptive gate biasing technique; current 1500 muA; current 50 muA; light-load conditions; load currents; near-threshold voltage energy redistribution control; off-chip inductors; peak efiiciency single-inductor multiple-output; power MOSFET; single-inductor multiple-output; single-inductor multiple-output based adaptive gate biasing dc-dc converter; size 0.18 mum; standard CMOS process; step-up dc-dc converter; switching losses; thermoelectric energy harvesting; voltage 100 mV; voltage 500 mV; DC-DC power converters; Detectors; Energy harvesting; Inductors; Logic gates; Power transistors; Voltage control; Adaptive gate biasing; dc-dc converter; energy redistribution control; single inductor multiple output; step-up converter; thermoelectric energy harvesting;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher :
ieee
ISSN :
1549-8328
Type :
jour
DOI :
10.1109/TCSI.2014.2360765
Filename :
6923477
Link To Document :
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