Title :
Progress in long-wavelength strained-layer InGaAs(P) quantum-well semiconductor lasers and amplifiers
Author :
Thiis, P.J.A. ; Tiemeijer, Luuk F. ; Binsma, J.J.M. ; Van Dongen, Teus
Author_Institution :
Philips Optoelectronics Centre, Eindhoven, Netherlands
fDate :
2/1/1994 12:00:00 AM
Abstract :
The progress in long-wavelength compressively and tensile-strained InGaAs(P) quantum-well semiconductor lasers and amplifiers is reviewed. By the application of grown-in strain, the device performance is considerably improved such that conventional bulk and unstrained quantum-well active-layer devices are outperformed, while a high reliability is maintained
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; reliability; semiconductor lasers; InGaAs(P) quantum-well semiconductor lasers; InGaAsP; compressively strained; device performance; grown-in strain; high reliability; long-wavelength; review; semiconductor laser amplifiers; strained-layer; tensile-strained; Capacitive sensors; Fiber lasers; Gallium arsenide; Laser theory; Maintenance; Optical materials; Photonic band gap; Quantum well devices; Quantum well lasers; Quantum wells; Semiconductor lasers; Semiconductor optical amplifiers;
Journal_Title :
Quantum Electronics, IEEE Journal of
